SiC particles, 8.3 ㎛ in volume average diameter, were chlorinated in an alumina tubular reactor, 2.4 cm in diameter and 32 cm in length, with reactor temperature varied from 100 to 1200℃. The flow rate of the gas admitted to the reactor was held constant at 300 cc/min, the mole fraction of chlorine in the gas at 0.1 and the reaction time at 4 h. The chlorination was negligibly small up to the temperature of 500℃. Thereafter, the degree of chlorination increased remarkably with increasing temperature until 900℃. As the temperature was increased further from 900 to 1200℃, the increments in chlorination degree were rather small. At 1200℃, the chlorination has nearly been completed. The surface area of the residual carbon varied with chlorination temperature in a manner similar to that with the variation of chlorination degree with temperature. The surface area at 1200℃ was 912 ㎡/g. A simple model was developed to predict the conversion of a SiC under various conditions. A Langmuir-Hinshelwood type rate law with two rate constants was employed in the model. Assuming that the two rate constants, k1 and k2, can be expressed as and , the four parameters, A1, E1, A2, and E2 were determined to be 32.0 m/min, 103,071 J/mol, 2.24 ㎥/mol and 39,526 J/mol, respectively, through regression to best fit experimental data. Keywords：Silicon carbide, Chlorination, Porous carbon, Specific surface area, Kinetic parameters