Particle and Aerosol Research Vol. 5, No. 1, March 2009 |
ISSN : 1738-8716 (Print) ISSN : 2287-8130 (Online) |
Particle deposition on a semiconductor wafer larger than 100 mm with electrostatic effect
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Abstracts
Particle deposition on a semiconductor wafer larger than 100 mm was studied experimentally and numerically.
Particularly the electrostatic effect on particle deposition velocity was investigated. The experimental apparatus
consisted of a particle generation system, a particle deposition chamber and a wafer surface scanner. Experimental
data of particle deposition velocity were obtained for a semiconductor wafer of 200 mm diameter with the applied
voltage of 5,000 V and PSL particles of the sizes between 83 and 495 nm. The experimental data of particle deposition
velocity were compared with the present numerical results and the existing experimental data for a 100 mm
wafer by Ye et al. (1991) and Opiolka et al. (1994). The present numerical method took into consideration the
particle transport mechanisms of convection, Brownian diffusion, gravitational settling and electrostatic attraction
in an Eulerian frame of reference. Based on the comparison of the present experimental and numerical results with
the existing experimental results the present experimental method for a 200 mm semiconductor wafer was found to
be able to present reasonable data.
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