Particle and Aerosol Research
Vol. 14, No. 2, June 2018, Pages 41-47
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ISSN : 1738-8716 (Print)
ISSN : 2287-8130 (Online)
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A Numerical Study on Particle Deposition onto a Heated Semiconductor Wafer in Vacuum Environment
Su-Bin Park1), Kyung-Hoon Yoo1)*, Kun-Hyung Lee2)
1)Nanoscale Contamination Control Laboratory, Korea Institute of Industrial Technology (KITECH), Ansan-si 15588, Korea
2)Facility Technology Group, SAMSUNG DISPLAY, Asan-si 31454, Korea
*Corresponding author.
Tel.: +82-31-8040-6437, E-mail: khyoo@kitech.re.kr
Received 22 June 2018, Revised 28 June 2018, Accepted 29 June 2018, Available online 30 June 2018
http://dx.doi.org/10.11629/jpaar.2018.14.2.041
Abstracts
Numerical analysis was conducted to characterize particle deposition onto a heated horizontal semiconductor wafer in vacuum environment. In order to calculate the properties of gas surrounding the wafer, the gas was assumed to obey the ideal gas law. Particle transport mechanisms considered in the present study were convection, Brownian diffusion, gravitational settling and thermophoresis. Averaged particle deposition velocities on the upper surface of the wafer were calculated with respect to particle size, based on the numerical results from the particle concentration equation in the Eulerian frame of reference. The deposition velocities were obtained for system pressures of 1000 Pa~1 atm, wafer heating of 0~5 K and particle sizes of 2~104 nm. The present numerical results showed good agreement with the available experimental ones.
Keywords
Vacuum Environment, Horizontal Semiconductor Wafer, Ideal Gas, Thermophoresis, Particle Deposition velocity
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